| 1. | Gan - based meta1 - semiconductor - metal ( msm ) structure ultraviolet photodetector has been one of the focuses of interest in recent years for its plane structure , fabrication simplicity , and easy integration . however , the mechanisms of the i - v characteristics under illumination , the photocurrent gain and the strong persistent photoconductivity ( ppc ) are still unexplained to this day
当前, gan基msm结构紫外探测器在稳态光照下的电流和响应度随偏压变化的关系、实验中观测到的光增益现象以及持续光电导效应( ppc ) ,都没有明确的理论解释,因此器件设计中难以保证gan基msm结构紫外探测器的性能。 |
